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AN ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES

Author
BREEZE PA; HARTNAGEL HL
UNIV. NEWCASTLE UPON TYNE DEP. ELECTRICAL ELECTRONIC ENG., GBR
Source
THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 51-61; BIBL. 34 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE COMPOSEE STRUCTURE MOS ARSENIURE COMPOSE GALLIUM OXYDE CROISSANCE CRISTALLINE COMPOSITION CHIMIQUE QUALITE ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
COMPOUNDED STRUCTURE MOS STRUCTURE ARSENIDES OXIDES CRYSTAL GROWTH CHEMICAL COMPOSITION QUALITY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930360115

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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