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THE QUASI-2 DIMENSIONAL SYSTEM IN MOS-STRUCTURES

Author
DORDA G
SIEMENS AG, MUENCHEN 8000, DEU
Source
PHYS. SCRIPTA; SWE; DA. 1978; VOL. 18; NO 6; PP. 415-416; BIBL. 47 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE COMPOSEE STRUCTURE MOS COUCHE INVERSION CONTACT ELECTRIQUE CONTACT ISOLANT SEMICONDUCTEUR COUCHE ACCUMULATION QUANTIFICATION MODELE 2 DIMENSIONS ELECTRONIQUE
Keyword (en)
COMPOUNDED STRUCTURE MOS STRUCTURE INVERSION LAYER ELECTRIC CONTACT SEMICONDUCTOR INSULATOR CONTACT ENHANCEMENT LAYER QUANTIZATION TWO-DIMENSIONAL MODELS ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930362364

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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