A THEORETICAL AND EXPERIMENTAL ANALYSIS OF THE BURIED-SOURCE VMOS DYNAMIC RAM CELL
- Author
- JENNE FB; BARNES JJ; RODGERS TJ
AMERICAN MICROSYSTEMS INC., SANTA CLARA CA, USA - Source
- I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1204-1213; BIBL. 20 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- MEMOIRE MOS MEMOIRE ACCES DIRECT MEMOIRE DYNAMIQUE TECHNOLOGIE VMOS MEMOIRE ELECTRONIQUE
- Keyword (en)
- MOS MEMORY RANDOM ACCESS MEMORY(RAM) DYNAMICAL STORAGE VMOS TECHNOLOGY MEMORY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930367264
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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