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A THEORETICAL AND EXPERIMENTAL ANALYSIS OF THE BURIED-SOURCE VMOS DYNAMIC RAM CELL

Author
JENNE FB; BARNES JJ; RODGERS TJ
AMERICAN MICROSYSTEMS INC., SANTA CLARA CA, USA
Source
I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1204-1213; BIBL. 20 REF.
Document type
Article
Language
English
Keyword (fr)
MEMOIRE MOS MEMOIRE ACCES DIRECT MEMOIRE DYNAMIQUE TECHNOLOGIE VMOS MEMOIRE ELECTRONIQUE
Keyword (en)
MOS MEMORY RANDOM ACCESS MEMORY(RAM) DYNAMICAL STORAGE VMOS TECHNOLOGY MEMORY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930367264

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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