A NEW FIELD EFFECT ATTENUATOR WITH DISTRIBUTED STRUCTURE FOR DIFFERENTIAL SIGNALS
- Author
- HIRABAYASHI M
SONY CORP., HODOGAYA-KU YOKOHAMA 240, JPN - Source
- JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 581-587; BIBL. 2 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DISPOSITIF EFFET CHAMP FABRICATION CARACTERISTIQUE ELECTRIQUE ATTENUATEUR CIRCUIT PARAMETRE REPARTI CIRCUIT DIFFERENTIEL DISPOSITIF PARAMETRE DISTRIBUE VARIABLE ELECTRONIQUE
- Keyword (en)
- ELECTRICAL CHARACTERISTIC ATTENUATOR DISTRIBUTED PARAMETER CIRCUIT DIFFERENTIAL CIRCUIT ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930388556
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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