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CONTINUOUS 300OK LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Author
DUPUIS RD; DAPKUS PD; CHIN R; HOLONYAK N; KIRCHOEFER SW
ELECTRON RES. CENT., ANAHEIM CA 92803, USA
Source
APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 265-267; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
DEPOT METHODE PHASE VAPEUR COMPOSE ORGANOMETALLIQUE DEPOT CHIMIQUE HETEROJONCTION LASER SEMICONDUCTEUR LASER CONTINU TEMPERATURE AMBIANTE ARSENIURE COMPOSE GALLIUM COMPOSE ALUMINIUM FABRICATION OPTIQUE
Keyword (en)
GROWTH FROM VAPOR ORGANO-METALLICS CHEMICAL DEPOSITION HETEROJUNCTION SEMICONDUCTOR LASER CW LASER ROOM TEMPERATURE ARSENIDES OPTICS
Keyword (es)
OPTICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics

Discipline
Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930402808

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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