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DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION

Author
SVANTESSON KG
ROYAL INST. TECHNOL. PHYS. DEP., STOCKHOLM 100 44, SWE
Source
J. PHYS. D; GBR; DA. 1979; VOL. 12; NO 3; PP. 425-436; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
SEMICONDUCTEUR ABSORPTION OPTIQUE REFLEXION OPTIQUE METHODE MESURE ABSORPTION IR REFLEXION IR LASER PHOTOINJECTION SILICIUM PHYSIQUE SOLIDE
Keyword (en)
SEMICONDUCTOR MATERIALS OPTICAL ABSORPTION OPTICAL REFLECTION MEASUREMENT METHOD INFRARED ABSORPTION INFRARED REFLECTION LASER PHOTOINJECTION SILICON SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930426555

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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