CONTACTLESS PROBING OF SEMICONDUCTOR DOPANT PROFILE PARAMETERS BY IR SPECTROSCOPY
- Author
- WAGNER HH; SCHAEFER RR
INTERNATIONAL BUSINESS MACHINES, SINDELFINGEN, DEU - Source
- J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2697-2704; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ABSORPTION IR REFLEXION IR IMPLANTATION IMPURETE CONCENTRATION IMPURETE RECUIT SILICIUM IMPURETE ARSENIC DOPAGE DISTRIBUTION IMPURETE SPECTROMETRIE IR DOSE METALLOIDE DOPAGE AS PHYSIQUE SOLIDE CRISTALLOGRAPHIE
- Keyword (en)
- INFRARED ABSORPTION INFRARED REFLECTION IMPURITY DENSITY ANNEALING SILICON DOPING IMPURITY DISTRIBUTION INFRARED SPECTROMETRY INFRARED SPECTROSCOPY DOSE SOLID PHYSICS CRISTALLOGRAPHY
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930451699
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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