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CONTACTLESS PROBING OF SEMICONDUCTOR DOPANT PROFILE PARAMETERS BY IR SPECTROSCOPY

Author
WAGNER HH; SCHAEFER RR
INTERNATIONAL BUSINESS MACHINES, SINDELFINGEN, DEU
Source
J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2697-2704; BIBL. 11 REF.
Document type
Article
Language
English
Keyword (fr)
ABSORPTION IR REFLEXION IR IMPLANTATION IMPURETE CONCENTRATION IMPURETE RECUIT SILICIUM IMPURETE ARSENIC DOPAGE DISTRIBUTION IMPURETE SPECTROMETRIE IR DOSE METALLOIDE DOPAGE AS PHYSIQUE SOLIDE CRISTALLOGRAPHIE
Keyword (en)
INFRARED ABSORPTION INFRARED REFLECTION IMPURITY DENSITY ANNEALING SILICON DOPING IMPURITY DISTRIBUTION INFRARED SPECTROMETRY INFRARED SPECTROSCOPY DOSE SOLID PHYSICS CRISTALLOGRAPHY
Keyword (es)
FISICA DEL ESTADO CONDENSADO CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930451699

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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