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UNTERSUCHUNGEN ZUR HETEROEPITAKTISCHEN ABSCHEIDUNG VON GAP AUF GAAS AUS DER SN-LOESUNG.

Other title
ETUDE DU DEPOT HETEROEPITAXIQUE DE GAP SUR GAAS A PARTIR D'UNE SOLUTION SN. (fr)
Author
GOTTSCHALCH V; KRAMER P; BUTTER E
SEKT. CHEM., KARL-MARX-UNIV., DDR-701 LEIPZIG
Source
KRISTALL U. TECH.; DTSCH.; DA. 1978; VOL. 13; NO 5; PP. 543-551; ABS. ENG; BIBL. 32 REF.
Document type
Article
Language
German
Keyword (fr)
GALLIUM COMPOSE PHOSPHURE COUCHE EPITAXIQUE CROISSANCE CRISTALLINE METHODE PHASE FONDUE HETEROEPITAXIE PERFECTION CRISTALLINE SUPPORT ORIENTATION CRISTALLINE ETUDE EXPERIMENTALE ARSENIURE INTERFACE CROISSANCE GALLIUM PHOSPHURE GALLIUM PHOSPHOARSENIURE COMPOSE MINERAL SUPPORT GAAS CRISTALLOGRAPHIE
Keyword (en)
GALLIUM COMPOUND PHOSPHIDES EPITAXIAL FILM CRYSTAL GROWTH GROWTH FROM MELT HETEROEPITAXY CRYSTAL PERFECTION CRYSTAL ORIENTATION EXPERIMENTAL STUDY ARSENIDES GROWTH INTERFACE GALLIUM PHOSPHIDE INORGANIC COMPOUND CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7940056435

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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