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DEFECT ANNEALING IN POLYCRYSTALLINE SILICON FILMS

Author
DVURECHENSKY AV; GERASIMENKO NN; POTAPOVA LP
ACAD. SCI. SIBERIAN BRANCH INST. SEMICONDUCTOR PHYS., NOVOSIBIRSK, SUN
Source
THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 3; PP. 329-332; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
SILICIUM COUCHE MINCE CRISTALLISATION DEPOT CHIMIQUE PYROLYSE MICROSTRUCTURE SUPPORT TEMPERATURE SPECTROMETRIE RPE RECUIT ATMOSPHERE CONTROLEE METALLOIDE SUPPORT SI SUPPORT SIO2 CRISTALLOGRAPHIE
Keyword (en)
SILICON THIN FILM CRYSTALLIZATION CHEMICAL DEPOSITION PYROLYSIS MICROSTRUCTURE ULTRASTRUCTURE TEMPERATURE EPR SPECTROMETRY ANNEALING CONTROLLED ATMOSPHERE CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7940199511

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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