FORMATION D'UNE COUCHE INTERMEDIAIRE LORS DE LA CROISSANCE EPITAXIQUE DES SOLUTIONS SOLIDES IN1-XGAXP SUR SUPPORT D'ARSENIURE DE GALLIUM
- Author
- BATYREV NI; UFIMTSEV VB; CHUKICHEV MV
MOSKOVSKIJ INST. EHLEKTRON. TEKH., SUN - Source
- KRISTALLOGRAFIJA; SUN; DA. 1979; VOL. 24; NO 2; PP. 338-342; BIBL. 3 REF.
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- INDIUM COMPOSE GALLIUM COMPOSE PHOSPHURE SOLUTION SOLIDE COUCHE EPITAXIQUE CROISSANCE CRISTALLINE COUCHE TRANSITION HETEROEPITAXIE METHODE EN SOLUTION ETUDE EXPERIMENTALE GALLIUM INDIUM PHOSPHURE MIXTE COMPOSE MINERAL SUPPORT GAAS CRISTALLOGRAPHIE
- Keyword (en)
- INDIUM COMPOUND GALLIUM COMPOUND PHOSPHIDES SOLID SOLUTION EPITAXIAL FILM CRYSTAL GROWTH TRANSITION LAYER HETEROEPITAXY GROWTH FROM SOLUTION EXPERIMENTAL STUDY INORGANIC COMPOUND CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7940398394
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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