EVALUATION OF TEMPERATURE DISTRIBUTION OF MELT IN SILICON RIBBON GROWTH
- Author
- KURODA E; MATSUDA M; KOZUKA H; MAKI M
HITACHI LTD., TOKYO, JPN - Source
- JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 471-477; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM CROISSANCE CRISTALLINE MONOCRISTAL METHODE PHASE FONDUE METHODE EFG FORME CROISSANCE TEMPERATURE DISTRIBUTION SPATIALE ETUDE EXPERIMENTALE METALLOIDE CRISTALLOGRAPHIE
- Keyword (en)
- SILICON CRYSTAL GROWTH SINGLE CRYSTAL GROWTH FROM MELT EFG METHOD CRYSTAL GROWTH HABIT TEMPERATURE SPATIAL DISTRIBUTION EXPERIMENTAL STUDY CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7940446648
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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