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FORMATION OF IRIDIUM SILICIDES FROM I2 THIN FILMS ON SI SUBSTRATES

Author
PETERSSON S; BAGLIN J; HAMMER W; D'HEURLE F; KUAN TS; OHDOMARI I; DE SOUSA PIRES J; TOVE P
IBM THOMAS J. WATSON RES. CENT., YORKTOWN HEIGHTS NY 10598, USA
Source
J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3357-3365; BIBL. 27 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE CONTACT REDRESSEUR SILICIURE COMPOSE IRIDIUM SUBSTRAT SEMICONDUCTEUR SILICIUM FORMATION HAUTE TEMPERATURE MICROSTRUCTURE SILICIURE IRIDIUM ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT RECTIFYING CONTACT SILICIDES SEMICONDUCTOR SUBSTRATE SILICON HIGH TEMPERATURE MICROSTRUCTURE ULTRASTRUCTURE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030011125

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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