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DUAL-GATE M.E.S.F.E.T. SELF-OSCILLATING X-BANDS MIXERS

Author
STAHLMANN R; TSIRONIS C; PONSE F; BENEKING H
TECH. UNIV. AACHEN, INST. SEMICONDUCTOR ELECTRON.,AACHEN 5100,DEU
Source
ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 17; PP. 524-526; BIBL. 3 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY MELANGEUR HYPERFREQUENCE ARSENIURE COMPOSE GALLIUM BANDE X CARACTERISTIQUE FONCTIONNEMENT GAIN BRUIT FOND ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR MICROWAVE MIXER ARSENIDES X BAND PERFORMANCE CHARACTERISTIC GAIN NOISE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030029754

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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