OHMIC CONTACTS ON ION-IMPLANTED N-TYPE GAAS LAYERS
- Author
- INADA T; KATO S; HARA T; TOYODA N
HOSEI UNIV., COLL. ENG.,KOGANEI TOKYO 184,JPN - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4466-4468; BIBL. 10 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT OHMIQUE IMPLANTATION ION ARSENIURE COMPOSE GALLIUM CONDUCTIVITE TYPE N RESISTANCE CONTACT ARSENIURE GALLIUM ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT OHMIC CONTACT ION IMPLANTATION ARSENIDES N TYPE CONDUCTIVITY CONTACT RESISTANCE ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030036106
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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