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OHMIC CONTACTS ON ION-IMPLANTED N-TYPE GAAS LAYERS

Author
INADA T; KATO S; HARA T; TOYODA N
HOSEI UNIV., COLL. ENG.,KOGANEI TOKYO 184,JPN
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4466-4468; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE IMPLANTATION ION ARSENIURE COMPOSE GALLIUM CONDUCTIVITE TYPE N RESISTANCE CONTACT ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT ION IMPLANTATION ARSENIDES N TYPE CONDUCTIVITY CONTACT RESISTANCE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030036106

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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