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COMPARISON OF GAAS IMPATT DESIGNS FOR 20 GHZ

Author
BERENZ JJ; VICHR M; FANK FB
VARIAN ASSOCIATES,PALO ALTO CA 94303,USA
Source
ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 694-695; BIBL. 3 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE DIODE IMPATT ARSENIURE COMPOSE GALLIUM ANALYSE FONCTIONNEMENT HYPERFREQUENCE PROFIL DOPAGE BANDE K PUISSANCE SORTIE MESURE ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
DIODE IMPATT DIODE ARSENIDES OPERATION STUDY MICROWAVE DOPING PROFILE K BAND OUTPUT POWER MEASUREMENT ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030054046

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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