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ELECTRICAL PROPERTIES OF GE-DOPED P-TYPE ALXGA1-XAS

Author
ZUKOTYNSKI S; SUMSKI S; PANISH MB; CASEY HC JR
BELL TELEPHONE LABORATORIES,MURRAY HILL NJ 07974,USA
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5795-5799; BIBL. 20 REF.
Document type
Article
Language
English
Keyword (fr)
EFFET HALL CONDUCTIVITE ELECTRIQUE BASSE TEMPERATURE CONCENTRATION IMPURETE CENTRE DONNEUR CENTRE ACCEPTEUR ENERGIE ACTIVATION COMPOSITION CHIMIQUE COUCHE MINCE HAUTE TEMPERATURE ARSENIURE ALUMINIUM GALLIUM IMPURETE GERMANIUM PHYSIQUE SOLIDE
Keyword (en)
HALL EFFECT ELECTRICAL CONDUCTIVITY LOW TEMPERATURE IMPURITY DENSITY DONOR CENTER ACCEPTOR CENTER ACTIVATION ENERGY CHEMICAL COMPOSITION THIN FILM HIGH TEMPERATURE SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030072304

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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