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ROOM TEMPERATURE TRANSFORMATIONS IN SIO2 LAYERS INDUCED BY CHEMICAL COMPOUNDS. II

Author
HOFFMANN G; LORINCZY A; NEMETH SALLAY M; SZEP IC
HUNGARIAN ACAD. SCI., RES. INST. TECH. PHYS.,BUDAPEST,HUN
Source
THIN SOLID FILMS; NLD; DA. 1979; VOL. 59; NO 3; PP. 319-325; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
COUCHE MINCE ETAT ELECTRONIQUE INTERFACE DENSITE ETAT STRUCTURE MOS DISRUPTION ELECTRIQUE ABSORPTION IR SUPPORT STRUCTURE COMPOSEE OXYDE COMPOSE SILICIUM TRAITEMENT CHIMIQUE OXYDE SILICIUM DIETHYLETHER PHYSIQUE SOLIDE ELECTRONIQUE
Keyword (en)
THIN FILM INTERFACE ELECTRON STATE DENSITY OF STATES MOS STRUCTURE ELECTRIC BREAKDOWN INFRARED ABSORPTION COMPOUNDED STRUCTURE OXIDES CHEMICAL TREATMENT SOLID PHYSICS ELECTRONICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030115475

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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