THE EFFECT OF BAKING ON THE QUALITY OF GAAS LPE LAYERS
- Author
- BHAR TN; DAT R
HOWARD UNIV., DEP. ELECTR. ENG.,WASHINGTON DC,USA - Source
- SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 8; PP. 743-744
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRAITEMENT THERMIQUE COUCHE EPITAXIQUE ARSENIURE COMPOSE GALLIUM SEMICONDUCTEUR CONCENTRATION PORTEUR CHARGE DEPOT METHODE PHASE LIQUIDE ETUVAGE ELECTRONIQUE
- Keyword (en)
- HEAT TREATMENT EPITAXIAL FILM ARSENIDES SEMICONDUCTOR MATERIALS CHARGE CARRIER CONCENTRATION GROWTH FROM LIQUID PARBOILING ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030139264
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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