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CARACTERISATION ELECTROCHIMIQUE DU SILICIUM DOPE PAR IMPLANTATION IONIQUE

Author
MAAREF ABDERRAGAK
Source
FRA; DA. 1979; 74 P.: ILL.; 30 CM; BIBL. DISSEM.; TH. 3EME CYCLE: ELECTROCHIM./PARIS 6/1979
Document type
Thesis
Language
French
Keyword (fr)
INTERFACE INTERFACE ELECTROLYTE SEMICONDUCTEUR SILICIUM ACIDE FLUORHYDRIQUE IMPLANTATION ION GENERATION PORTEUR CHARGE TRAITEMENT THERMIQUE CARACTERISTIQUE COURANT TENSION CHARGE ESPACE PROPRIETE PHYSIQUE PORTEUR CHARGE ELECTRONIQUE PHYSIQUE SOLIDE
Keyword (en)
INTERFACES SEMICONDUCTOR ELECTROLYTE INTERFACE SILICON ION IMPLANTATION CHARGE CARRIER GENERATION HEAT TREATMENT VOLTAGE CURRENT CURVE SPACE CHARGE PHYSICAL PROPERTIES CHARGE CARRIER ELECTRONICS SOLID PHYSICS
Keyword (es)
ELECTRONICA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030141860

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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