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ELECTRICAL PROPERTIES AND STRUCTURE OF BORON-DOPED SPUTTER-DEPOSITED POLYCRYSTALLINE FILMS

Author
HABERLE K; FROESCHLE E
TECH. UNIV., INST. SEMICONDUCTOR ELECTRON.,AACHEN 5100,DEU
Source
THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 61; NO 1; PP. 105-113; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
CONDUCTIVITE ELECTRIQUE CONCENTRATION PORTEUR CHARGE EFFET HALL MOBILITE HALL PREPARATION RECUIT IMPURETE COUCHE MINCE POLYCRISTAL SILICIUM PULVERISATION CATHODIQUE ETAT AMORPHE DOPAGE ANALYSE DIFFRACTION ELECTRON ANALYSE MET ANALYSE ME BALAYAGE PHYSIQUE SOLIDE CRISTALLOGRAPHIE
Keyword (en)
ELECTRICAL CONDUCTIVITY CHARGE CARRIER CONCENTRATION HALL EFFECT HALL MOBILITY PREPARATION ANNEALING IMPURITIES THIN FILM POLYCRYSTAL SILICON CATHODIC SPUTTERING AMORPHOUS STATE DOPING SOLID PHYSICS CRISTALLOGRAPHY
Keyword (es)
FISICA DEL ESTADO CONDENSADO CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030158153

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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