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ELECTRICAL PROPERTIES OF ION-IMPLANTED LAYERS IN HG0.79CD0.21TE

Author
MARGALIT S; NEMIROVSKY Y; ROTSTEIN I
TECHNION-ISRAEL INST. TECHNOL.,HAIFA,ISR
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6386-6389; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
CONDUCTIVITE ELECTRIQUE CONDUCTIVITE SUPERFICIELLE SURFACE IMPLANTATION IMPURETE IRRADIATION ION CONCENTRATION PORTEUR CHARGE RECUIT COMPOSE METAL TRANSITION HAUTE TEMPERATURE TELLURURE CADMIUM MERCURE ION BORE ION ARGON ION INDIUM ION PHOSPHORE ION OR PHYSIQUE SOLIDE
Keyword (en)
ELECTRICAL CONDUCTIVITY SURFACE CONDUCTIVITY SURFACE IRRADIATION IONS CHARGE CARRIER CONCENTRATION ANNEALING HIGH TEMPERATURE SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030185967

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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