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CARACTERISATION DYNAMIQUE DES TRANSISTORS BIPOLAIRES ET V. MOST: APPLICATION A L'ETUDE D'UN AMPLIFICATEUR LARGE BANDE

Author
MENDIZABAL HUGO
Source
FRA; DA. 1979; 42; (153) P.-PL.; 30 CM; BIBL. 29 REF.; TH. DOCT.-ING/TOULOUSE, I.N.P./1979
Document type
Thesis
Language
French
Keyword (fr)
TRANSISTOR TRANSISTOR EFFET CHAMP TRANSISTOR MOS TRANSISTOR VMOS AMPLIFICATEUR SIMULATION NUMERIQUE ANALYSE FONCTIONNEMENT REGIME DYNAMIQUE LARGE BANDE ELECTRONIQUE
Keyword (en)
TRANSISTOR FIELD EFFECT TRANSISTOR MOS TRANSISTOR VMOS TRANSISTOR AMPLIFIER DIGITAL SIMULATION OPERATION STUDY DYNAMIC CONDITIONS WIDE BAND ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030204049

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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