THERMAL CHARACTERISTICS OF THE H2SO4-H2O2 SILICON WAFER CLEANING SOLUTION
- Author
- PINTCHOVSKI F; PRICE JB; TOBIN PJ; PEAVEY J; KOBOLD K
MOTOROLA INC.,MESA AZ 85202,USA - Source
- J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1428-1430; BIBL. 4 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- FABRICATION NETTOYAGE PASTILLE SEMICONDUCTRICE SILICIUM CARACTERISTIQUE THERMIQUE SOLUTION ACIDE ACIDE SULFURIQUE PEROXYDE HYDROGENE ELECTRONIQUE
- Keyword (en)
- CLEANING SILICON THERMAL CHARACTERISTIC ACIDIC SOLUTION SULFURIC ACID ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030204065
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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