CARACTERISATION DES SEMICONDUCTEURS A GAP DIRECT PAR METHODES OPTIQUES. APPLICATIONS A ZNTE ET CDS
- Author
- ROMESTAIN ROBERT; NAHMANI ANDRE; DESSUS JEAN LUC;
UNIVERSITE DE GRENOBLE 1, LABORATOIRE DE SPECTROMETRIE PHYSIQUE,GRENOBLE,FRA DELEGATION GENERALE A LA RECHERCHE SCIENTIFIQUE ET TECHNIQUE,PARIS,FRA,(PATR.) - Source
- FRA; DA. 1979; DGRST-77 7 1635; (23) F.: ILL.; 30 CM; ABS. ENG; ACTION CONCERTEE: PHYSIQUE ELECTRONIQUE
- Document type
- Report
- Language
- French
- Keyword (fr)
- ABSORPTION UV EFFET FARADAY CONCENTRATION IMPURETE TRES BASSE TEMPERATURE COMPOSE METAL TRANSITION TELLURURE ZINC SULFURE CADMIUM IMPURETE PHOSPHORE PHYSIQUE SOLIDE
- Keyword (en)
- ULTRAVIOLET ABSORPTION FARADAY EFFECT IMPURITY DENSITY VERY LOW TEMPERATURE SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030228584
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Europe PubMed Central access
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