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INFLUENCE DE L'IRRADIATION GAMMA SUR LES CARACTERISTIQUES V-A DES HETEROJONCTIONS GE-GAAS ET DES DIODES A BARRIERE DE SCHOTTKY AU-CR-GAAS

Author
KONAKOVA RV; SEMENOVA GN; TYURIK YU A; MEL'NIKOV GD; SHAKHOVTSOV VI; SHVARTS YU M
AN USSR, INST. POLUPROVODNIKOV,KIEV,UKR
Source
UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1979; VOL. 24; NO 9; PP. 1308-1312; ABS. ENG; BIBL. 11 REF.
Document type
Article
Language
Russian
Keyword (fr)
HETEROJONCTION CARACTERISTIQUE COURANT TENSION IRRADIATION RAYONNEMENT GAMMA DIODE DIODE BARRIERE SCHOTTKY PHYSIQUE SOLIDE ELECTRONIQUE
Keyword (en)
HETEROJUNCTION VOLTAGE CURRENT CURVE IRRADIATION GAMMA RAYS DIODE SCHOTTKY BARRIER DIODE SOLID PHYSICS ELECTRONICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030244415

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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