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POWER MOS-FET. HIGH-FIDELITY POWER AMPLIFIER USE COMPLEMENTARY FET

Author
TOMISAWA Y; KURAMOTO T; TANABE H; IZUMIDA T
Source
TOSHIBA REV., INTERNATION. ED.; JPN; DA. 1979; NO 124; PP. 23-26
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR MOS TRANSISTOR PUISSANCE AMPLIFICATEUR ETAT SOLIDE AMPLIFICATEUR PUISSANCE TENSION DISRUPTIVE TECHNOLOGIE MOS COMPLEMENTAIRE ANALYSE FONCTIONNEMENT ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR MOS TRANSISTOR POWER TRANSISTOR SOLID STATE AMPLIFIER POWER AMPLIFIER BREAKDOWN VOLTAGE COMPLEMENTARY MOS TECHNOLOGY OPERATION STUDY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030255680

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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