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DEVELOPER TEMPERATURE EFFECTS ON E-BEAM AND OPTICALLY EXPOSED POSITIVE PHOTORESIST

Author
SHAW JM; HATZAKIS M
IBM THOMAS J. WATSON RES. CENT.,YORKTOWN HEIGHTS NY 10598,USA
Source
J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 11; PP. 2026-2031; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
RESINE PHOTORESIST RESINE POSITIVE RESINE ELECTRONOSENSIBLE TEMPERATURE DEVELOPPEMENT RESINE PHOTOLITHOGRAPHIE DEVELOPPEMENT PHOTOGRAPHIQUE REVELATEUR ELECTRONIQUE METROLOGIE PHYSIQUE THEORIQUE
Keyword (en)
RESINS PHOTORESIST TEMPERATURE PHOTOLITHOGRAPHY PHOTOGRAPHIC DEVELOPMENT DEVELOPPER ELECTRONICS MEASUREMENT SCIENCE THEORETICAL PHYSICS
Keyword (es)
ELECTRONICA METROLOGIA FISICA TEORICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030265682

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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