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DETERMINATION OF THE CAPTURE PROBABILITIES OF TWO DEEP IMPURITY LEVELS BY PHOTOCONDUCTIVE DECAY

Author
KUWANO H; ABE M; OKUBO S
KEIO UNIV., FAC. ENG.,YOKOHAMA-SHI,JPN
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 437-443; BIBL. 16 REF.
Document type
Article
Language
English
Keyword (fr)
PHOTOCONDUCTIVITE NIVEAU IMPURETE PIEGEAGE PORTEUR CHARGE SILICIUM IMPURETE NICKEL PHYSIQUE SOLIDE
Keyword (en)
PHOTOCONDUCTIVITY IMPURITY LEVEL CHARGE CARRIER TRAPPING SILICON SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030265720

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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