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A NOVEL BEAM LEAD GAAS SCHOTTKY-BARRIER DIODE FABRICATED BY USING THICK POLYIMIDE FILM

Author
HARADA Y; FUKUDA H
SANYO ELECTRIC CO. LTD.,OSAKA 573,JPN
Source
I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1799-1804; BIBL. 7 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE DIODE BARRIERE SCHOTTKY ARSENIURE COMPOSE GALLIUM CONNEXION DEPASSANTE COUCHE EPAISSE POLYIMIDE FABRICATION CAPACITE ELECTRIQUE REDUCTION ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
DIODE SCHOTTKY BARRIER DIODE ARSENIDES BEAM LEAD THICK FILM CAPACITANCE REDUCTION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030291437

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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