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OHMIC CONTACTS ON N-GAAS PRODUCED BY LASER ALLOYING OF GE FILMS

Author
BADERTSCHER G; SALATHE RP; LUTHY W
UNIV. BERN, INST. APPLIED PHYS.,BERN 3012,CHE
Source
ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 4; PP. 113-114; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE FABRICATION LASER LASER DECLENCHE ARSENIURE COMPOSE GALLIUM SURFACE MORPHOLOGIE ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT LASER Q SWITCHED LASER ARSENIDES SURFACE MORPHOLOGY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030291516

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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