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ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF CD1-XZNXS/P-GAAS HETEROJUNCTIONS

Author
FRANZOSI P; GHEZZI C; GOMBIA E
C.N.R., LAB. MASPEC,PARMA 43100,ITA
Source
APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 21; NO 1; PP. 83-90; BIBL. 38 REF.
Document type
Article
Language
English
Keyword (fr)
HETEROJONCTION CONDUCTIVITE ELECTRIQUE CONCENTRATION PORTEUR CHARGE PROPRIETE PHOTOELECTRONIQUE EFFET PHOTOVOLTAIQUE COMPOSE METAL TRANSITION COMPOSE GALLIUM ARSENIURE SULFURE COMPOSE CADMIUM COMPOSE ZINC ARSENIURE GALLIUM SULFURE CADMIUM ZINC PHYSIQUE SOLIDE ELECTRONIQUE
Keyword (en)
HETEROJUNCTION ELECTRICAL CONDUCTIVITY CHARGE CARRIER CONCENTRATION PHOTOELECTRONIC PROPERTIES PHOTOVOLTAIC EFFECT ARSENIDES SULFIDES SOLID PHYSICS ELECTRONICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030298995

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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