COMPARISON OF SHUBNIKOV-DE HAAS EFFECT AND CYCLOTRON RESONANCE ON SI(100) MOS TRANSISTORS UNDER UNIAXIAL STRESS
- Author
- GESCH H; DORDA G; STALLHOFER P; KOTTHAUS JP
SIEMENS AG,MUENCHEN,DEU - Source
- SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 7; PP. 543-546; BIBL. 14 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR MOS CONTRAINTE UNIAXIALE MAGNETOCONDUCTIVITE MESURE RESONANCE CYCLOTRON EFFET SHUBNIKOV DE HAAS ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR MOS TRANSISTOR UNIAXIAL STRESS MAGNETOCONDUCTIVITY MEASUREMENT SHUBNIKOV DE HAAS EFFECT ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030300517
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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