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POWER COMBINER PERFORMANCE OF GAAS MESFET

Author
PUCEL RA
RAYTHEON CO,WALTHAM MA,USA
Source
MICROWAVE J.; USA; DA. 1980; VOL. 23; NO 3; PP. 51-56; (5 P.)
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY ARSENIURE COMPOSE GALLIUM BANDE X CONCEPTION ANALYSE FONCTIONNEMENT HYPERFREQUENCE TRANSISTOR HYPERFREQUENCE FABRICATION ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR ARSENIDES X BAND DESIGN OPERATION STUDY MICROWAVE MICROWAVE TRANSISTOR ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030300536

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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