ROOM-TEMPERATURE C.W. OPERATION OF INP/INGAASP/INP DOUBLE HETEROSTRUCTURE DIODE LASERS EMITTING AT 1,55 MU M
- Author
- KAWAGUCHI H; TAKAHEI K; TOYOSHIMA Y; NAGAI H; IWANE G
NIPPON TELEGRAPH & TELEPHONE PUBL. CORP.,MUSASHINO-SHI TOKYO 180,JPN - Source
- ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 669-670; BIBL. 5 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LASER SEMICONDUCTEUR LASER CONTINU TEMPERATURE AMBIANTE HETEROJONCTION DOUBLE PHOSPHURE COMPOSE INDIUM ARSENIURE COMPOSE GALLIUM PHOSPHURE INDIUM PHOSPHOARSENIURE GALLIUM INDIUM OPTIQUE
- Keyword (en)
- SEMICONDUCTOR LASER CW LASER ROOM TEMPERATURE DOUBLE HETEROJUNCTION PHOSPHIDES ARSENIDES OPTICS
- Keyword (es)
- OPTICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030323926
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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