AN APPROXIMATE FORMULA FOR THE AVALANCHE BREAKDOWN FIELD IN SEMICONDUCTORS
- Author
- HRIVNAK L
SLOVAK ACAD. SCI. ELECTROTECH. INST.,BRATISLAVA,CSK - Source
- PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1979; VOL. 95; NO 1; PP. K5-K9; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- MATERIAU SEMICONDUCTEUR DISRUPTION ELECTRIQUE AVALANCHE ELECTRONIQUE ARSENIURE COMPOSE GALLIUM PROPRIETE ELECTRIQUE ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- ELECTRIC BREAKDOWN ELECTRONIC AVALANCHE ARSENIDES ELECTRICAL PROPERTIES ELECTROMAGNETISM ELECTRONICS SOLID PHYSICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030326317
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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