DETERMINATION OF THE PHONON MODES INVOLVED IN THE CARRIER-PHONON INTERACTION IN SILICON INVERSION LAYERS AT LOW TEMPERATURES BY NONOHMIC TRANSPORT MEASUREMENTS
- Author
- NEUGEBAUER T; LANDWEHR G
UNIV. WUERZBURG, PHYS. INST.,WUERZBURG,DEU - Source
- PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 702-708; BIBL. 23 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MOS COUCHE INVERSION TEMPERATURE PORTEUR CHARGE MOBILITE PORTEUR CHARGE EFFET SHUBNIKOV DE HAAS CHAMP MAGNETIQUE CHAMP INTENSE BASSE TEMPERATURE TRES BASSE TEMPERATURE INTERACTION ELECTRON PHONON MODE PHONON SILICIUM PHYSIQUE SOLIDE ELECTRONIQUE
- Keyword (en)
- MOS STRUCTURE INVERSION LAYER CHARGE CARRIER TEMPERATURE CHARGE CARRIER MOBILITY SHUBNIKOV DE HAAS EFFECT MAGNETIC FIELD HIGH FIELD LOW TEMPERATURE VERY LOW TEMPERATURE ELECTRON PHONON INTERACTION PHONON MODE SILICON SOLID PHYSICS ELECTRONICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO ELECTRONICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030328788
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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