THE IDEAL(111), (110) AND (100) SURFACES OF SI, GE AND GAAS; A COMPARISON OF THEIR ELECTRONIC STRUCTURE
- Author
- IVANOV I; MAZUR A; POLLMANN J
UNIV. DORTMUND, INST. PHYS.,DORTMUND 4600,DEU - Source
- SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 92; NO 2-3; PP. 365-384; BIBL. 46 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ETAT ELECTRONIQUE SURFACE DENSITE ETAT STRUCTURE BANDE SURFACE THEORIE SILICIUM GERMANIUM ARSENIURE GALLIUM PHYSIQUE SOLIDE
- Keyword (en)
- SURFACE ELECTRON STATE DENSITY OF STATES BAND STRUCTURE SURFACE THEORY THEORETICAL STUDIES SILICON GERMANIUM SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030339696
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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