THE EFFECT OF SUBSTRATE TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXY
- Author
- TSANG WT; REINHART FK; DITZENBERGER JA
BELL LAB.,MURRAY HILL NJ 07974,USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 2; PP. 118-120; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LASER SEMICONDUCTEUR HETEROJONCTION DOUBLE ARSENIURE COMPOSE GALLIUM COMPOSE ALUMINIUM EPITAXIE FABRICATION OPTIQUE
- Keyword (en)
- SEMICONDUCTOR LASER DOUBLE HETEROJUNCTION ARSENIDES EPITAXY OPTICS
- Keyword (es)
- OPTICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030354570
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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