A MODEL TO EXPLAIN THE ELECTRICAL BEHAVIOR OF P-TYPE SILICON SURFACES AFTER A CHEMICAL TREATMENT
- Author
- VIEWEG GUTBERLET FG; SIEGESLEITNER PF
WACKER-CHEMITRONIC GMBH,BURGHAUSEN 8263,DEU - Source
- J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1792-1794; BIBL. 3 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONDUCTIVITE ELECTRIQUE SURFACE CONCENTRATION PORTEUR CHARGE SILICIUM PHYSIQUE SOLIDE
- Keyword (en)
- ELECTRICAL CONDUCTIVITY SURFACE CHARGE CARRIER CONCENTRATION SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030413605
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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