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PREBREAKDOWN PHENOMENA IN GAAS EPITAXIAL LAYERS AND FET'S

Author
TSIRONIS C
TECH. UNIV., INST. SEMICONDUCTOR ELECTRON.,AACHEN 5100,DEU
Source
I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 277-282; BIBL. 18 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP COUCHE EPITAXIQUE ARSENIURE COMPOSE GALLIUM DISRUPTION ELECTRIQUE TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY MATERIAU SEMICONDUCTEUR ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR EPITAXIAL FILM ARSENIDES ELECTRIC BREAKDOWN METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030428371

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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