PREBREAKDOWN PHENOMENA IN GAAS EPITAXIAL LAYERS AND FET'S
- Author
- TSIRONIS C
TECH. UNIV., INST. SEMICONDUCTOR ELECTRON.,AACHEN 5100,DEU - Source
- I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 277-282; BIBL. 18 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP COUCHE EPITAXIQUE ARSENIURE COMPOSE GALLIUM DISRUPTION ELECTRIQUE TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY MATERIAU SEMICONDUCTEUR ARSENIURE GALLIUM ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR EPITAXIAL FILM ARSENIDES ELECTRIC BREAKDOWN METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030428371
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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