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A DEVICE MODEL FOR BURIED-CHANNEL CCD'S AND MOSFET'S WITH GAUSSIAN IMPURITY PROFILES

Author
TAYLOR GW; CHATTERJEE PK; CHAO HH
TEXAS INSTRUMENTS INC.,DALLAS TX 75265,USA
Source
I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 199-208; BIBL. 11 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR MOS DISPOSITIF COUPLE CHARGE CANAL COUCHE ENTERREE PROFIL DOPAGE LOI NORMALE SIMULATION ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR MOS TRANSISTOR CHARGE COUPLED DEVICE BURIED LAYER DOPING PROFILE GAUSSIAN DISTRIBUTION SIMULATION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030428375

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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