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CARACTERISATION DES NIVEAUX PIEGES DANS LES JONCTIONS GRADUELLES P+NSI TRES DOPEES AU OU PT

Author
OUALID J; GERVAIS J; JERISIAN R; LAUER A; MARTINUZZI S
FAC. SCI. TECH. MARSEILLE-ST. JEROME, LAB. PHOTOELECTR.,MARSEILLE 13397,FRA
Source
REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 1; PP. 25-31; ABS. ENG; BIBL. 22 REF.
Document type
Article
Language
French
Keyword (fr)
CENTRE ACCEPTEUR CENTRE DONNEUR NIVEAU IMPURETE JONCTION JONCTION GRADUELLE JONCTION P+ N SILICIUM DOPAGE IMPURETE OR IMPURETE PLATINE IMPURETE PHOSPHORE PHYSIQUE SOLIDE ELECTRONIQUE
Keyword (en)
ACCEPTOR CENTER DONOR CENTER IMPURITY LEVEL JUNCTION P+ N JUNCTION SILICON DOPING SOLID PHYSICS ELECTRONICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030435841

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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