SN-DOPED GAAS FILMS GROWN BY MOLECULAR BEAM EPITAXY
- Author
- FUJII T; SUZUKI H; HIYAMIZU S
FUJITSU LABORATORIES LTD.,NAKAHARA-KU KAWASAKI 211,JPN - Source
- FUJITSU SCI. TECH. J.; JPN; DA. 1979; VOL. 15; NO 4; PP. 121-130; BIBL. 25 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- COUCHE MINCE COUCHE EPITAXIQUE CONDENSATION FAISCEAU MOLECULAIRE DOPAGE ARSENIURE COMPOSE GALLIUM DEPOT METHODE PHASE VAPEUR TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY TRANSISTOR PUISSANCE FABRICATION ETUDE EXPERIMENTALE CROISSANCE CRISTALLINE GALLIUM COMPOSE IMPURETE GALLIUM ARSENIURE IMPURETE ETAIN ARSENIURE GALLIUM COMPOSE MINERAL DOPAGE SN ELECTRONIQUE CRISTALLOGRAPHIE
- Keyword (en)
- THIN FILM EPITAXIAL FILM MOLECULAR BEAM CONDENSATION DOPING ARSENIDES GROWTH FROM VAPOR FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR POWER TRANSISTOR EXPERIMENTAL STUDY CRYSTAL GROWTH GALLIUM COMPOUND IMPURITIES INORGANIC COMPOUND ELECTRONICS CRISTALLOGRAPHY
- Keyword (es)
- ELECTRONICA CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030455652
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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