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SN-DOPED GAAS FILMS GROWN BY MOLECULAR BEAM EPITAXY

Author
FUJII T; SUZUKI H; HIYAMIZU S
FUJITSU LABORATORIES LTD.,NAKAHARA-KU KAWASAKI 211,JPN
Source
FUJITSU SCI. TECH. J.; JPN; DA. 1979; VOL. 15; NO 4; PP. 121-130; BIBL. 25 REF.
Document type
Article
Language
English
Keyword (fr)
COUCHE MINCE COUCHE EPITAXIQUE CONDENSATION FAISCEAU MOLECULAIRE DOPAGE ARSENIURE COMPOSE GALLIUM DEPOT METHODE PHASE VAPEUR TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY TRANSISTOR PUISSANCE FABRICATION ETUDE EXPERIMENTALE CROISSANCE CRISTALLINE GALLIUM COMPOSE IMPURETE GALLIUM ARSENIURE IMPURETE ETAIN ARSENIURE GALLIUM COMPOSE MINERAL DOPAGE SN ELECTRONIQUE CRISTALLOGRAPHIE
Keyword (en)
THIN FILM EPITAXIAL FILM MOLECULAR BEAM CONDENSATION DOPING ARSENIDES GROWTH FROM VAPOR FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR POWER TRANSISTOR EXPERIMENTAL STUDY CRYSTAL GROWTH GALLIUM COMPOUND IMPURITIES INORGANIC COMPOUND ELECTRONICS CRISTALLOGRAPHY
Keyword (es)
ELECTRONICA CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030455652

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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