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COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-, HG-, AND HGTE-RICH SOLUTIONS

Author
BOWERS JE; SCHMIT JL; SPEERSCHNEIDER CJ; MACIOLEK RB
HONEYWELL CORP. TECHNOL. CENT.,BLOOMINGTON MN,USA
Source
I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 24-28; BIBL. 21 REF.
Document type
Article
Language
English
Keyword (fr)
DEPOT METHODE PHASE LIQUIDE COUCHE EPITAXIQUE PREPARATION TELLURURE COMPOSE CADMIUM COMPOSE MERCURE CROISSANCE CRISTALLINE MERCURE COMPOSE CADMIUM COMPOSE HETEROEPITAXIE SOLUTION SOLIDE COMPOSITION CHIMIQUE ETUDE EXPERIMENTALE CADMIUM MERCURE TELLURURE MIXTE TELLURURE CADMIUM MERCURE COMPOSE MINERAL SUPPORT CDTE ELECTRONIQUE CRISTALLOGRAPHIE
Keyword (en)
GROWTH FROM LIQUID EPITAXIAL FILM PREPARATION TELLURIDES CRYSTAL GROWTH MERCURY COMPOUND CADMIUM COMPOUND HETEROEPITAXY SOLID SOLUTION CHEMICAL COMPOSITION EXPERIMENTAL STUDY INORGANIC COMPOUND ELECTRONICS CRISTALLOGRAPHY
Keyword (es)
ELECTRONICA CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030455654

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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