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EFFECT OF A QUANTIZING MAGNETIC FIELD ON THE CAPACITANCE OF MOS STRUCTURES OF SMALL-GAP SEMICONDUCTORS

Author
CHOUDHURY DR; CHOWDHURY AK; CHAKRAVARTI AN
UNIV. COLL. SCI. TECHNOL.,CALCUTTA 700009,IND
Source
APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 22; NO 2; PP. 145-148; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE MOS CHAMP MAGNETIQUE CAPACITE ELECTRIQUE BANDE INTERDITE CHAMP ELECTRIQUE COMPOSE INDIUM ANTIMONIURE INDIUM ELECTRONIQUE PHYSIQUE SOLIDE
Keyword (en)
MOS STRUCTURE MAGNETIC FIELD CAPACITANCE ENERGY GAP ELECTRICAL FIELD ELECTRONICS SOLID PHYSICS
Keyword (es)
ELECTRONICA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030460398

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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