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A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTOR

Author
TANIMOTO M; MUROTA J; OHMORI Y; IEDA N
NIPPON TELEGRAPH. TELEPHONE PUBLIC CORP.,MUSASHINO-SHI TOKYO 180,JPN
Source
I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.
Document type
Article
Language
English
Keyword (fr)
MEMOIRE MEMOIRE LECTURE DESTRUCTIVE STRUCTURE MOS SILICIUM POLYCRISTAL MATERIAU SEMICONDUCTEUR MEMOIRE MORTE MEMOIRE PROM ELECTRONIQUE
Keyword (en)
MEMORY DESTRUCTIVE MEMORY MOS STRUCTURE SILICON POLYCRYSTAL READ ONLY MEMORY(ROM) PROM MEMORY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8030473258

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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