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LOCATION OF SELF-INTERSTITIAL ATOMS IN BORON-IMPLANTED SILICON BY MEANS OF RUTHERFORD BACKSCATTERING OF CHANNELLED IONS

Author
GOETZ G; SOMMER G
FRIEDRICH-SCHILLER UNIV., SEKT. PHYS.,JENA 69,DDR
Source
RAD. EFFECTS; GBR; DA. 1979; VOL. 41; NO 4; PP. 195-202; BIBL. 21 REF.
Document type
Article
Language
English
Keyword (fr)
SILICIUM IMPLANTATION ION INTERSTITIEL SOUSSTRUCTURE ANALYSE DIFFUSION ION ANALYSE DIFFUSION RUTHERFORD TEMPERATURE AMBIANTE BASSE TEMPERATURE DOPAGE B AUTOINTERSTITIEL METALLOIDE RETRODIFFUSION HELIUM ION ATOMIQUE CRISTALLOGRAPHIE
Keyword (en)
SILICON ION IMPLANTATION INTERSTITIAL ROOM TEMPERATURE LOW TEMPERATURE CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8040103811

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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