ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF LASER-INDUCED EPITAXIAL LAYERS IN SILICON
- Author
- YOUNG RT; NARAYAN J; WOOD RF
OAK RIDGE NATIONAL LAB.,OAK RIDGE TN 37830,USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 447-449; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM COUCHE EPITAXIQUE COUCHE MINCE ETAT AMORPHE CROISSANCE CRISTALLINE RECUIT RECRISTALLISATION FAISCEAU LASER DOPAGE DISTRIBUTION IMPURETE ANALYSE MET METALLOIDE SUPPORT SI DOPAGE AS CRISTALLOGRAPHIE
- Keyword (en)
- SILICON EPITAXIAL FILM THIN FILM AMORPHOUS STATE CRYSTAL GROWTH ANNEALING RECRYSTALLIZATION LASER BEAM DOPING IMPURITY DISTRIBUTION CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8040234318
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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