THE INFLUENCE OF TEMPERATURE ON THE OXIDATION OF CESIATED GAAS
- Author
- EBBINGHAUS G; SIMON A
MAX-PLANCK-INST. FESTKOERPERFORSCHUNG,STUTTGART 7000,DEU - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8252-8253; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- GALLIUM COMPOSE ARSENIURE SURFACE OXYDATION TRAITEMENT THERMIQUE IMPURETE ADSORPTION TEMPERATURE SPECTROMETRIE PHOTOELECTRON CESIUM!ACT COMPOSE DOPE REACTION THERMIQUE GALLIUM ARSENIURE!ENT CRISTALLOGRAPHIE CHIMIE MINERALE
- Keyword (en)
- GALLIUM COMPOUND ARSENIDES SURFACE OXIDATION HEAT TREATMENT IMPURITIES ADSORPTION TEMPERATURE PHOTOELECTRON SPECTROMETRY DOPED COMPOUND THERMAL REACTION CRISTALLOGRAPHY INORGANIC CHEMISTRY
- Keyword (es)
- CRISTALOGRAFIA QUIMICA INORGANICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- General chemistry and physical chemistry Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8040368474
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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