ELECTRICAL AND RECOMBINATION CHARACTERISTICS OF GE-GAAS AND SIXGE1-X-GAAS HETEROJUNCTIONS
- Author
- BORKOVSKAYA OY; DMITRUK NL; KONAKOVA RV; SOLDATENKO NN; TKHORIK YA
ACAD. SCI. UKRAINIAN SSR, INST. SEMICONDUCTORS/KIEV 252 028/UKR - Source
- PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. 395-400; ABS. RUS; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- HETEROJONCTION CARACTERISTIQUE CAPACITE TENSION CARACTERISTIQUE COURANT TENSION PHOTOCONDUCTIVITE RECOMBINAISON PORTEUR CHARGE PROPRIETE ELECTRIQUE TEMPERATURE GALLIUM ARSENIURE GERMANIUM SILICIUM PHYSIQUE SOLIDE ELECTRONIQUE
- Keyword (en)
- HETEROJUNCTION VOLTAGE CAPACITY CURVE VOLTAGE CURRENT CURVE PHOTOCONDUCTIVITY CHARGE CARRIER RECOMBINATION ELECTRICAL PROPERTIES TEMPERATURE GERMANIUM SILICON SOLID PHYSICS ELECTRONICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO ELECTRONICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130031314
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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